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| NJG1117HA8 GPS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra-small and ultra-thin package of USB6-A8 is adopted. PACKAGE OUTLINE NJG1117HA8 FEATURES Low voltage operation Low current consumption High small signal gain Low noise figure Input power at 1dB gain compression point High input IP3 Ultra-small & ultra-thin package +2.7V typ. 3.0mA typ. 19.5dB typ. @ f=1.575GHz 0.7dB typ. @ f=1.575GHz -16.5 dBm typ. @f=1.575GHz -2.0dBm typ. @f=1.575GHz+1.5751GHz USB6-A8 (Package size: 1.0x1.2x0.38mm) PIN CONFIGURATION HA8 Type (Top View) GND 3 GND R FIN 4 2 Bias Circuit GN D RFOU T Pin connection 1. RFOUT 2. GND 3. GND 4. RFIN 5. GND 6. GND 5 1 GN D 6 1Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2007-06-22 -1- NJG1117HA8 ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 ohm PARAMETER Drain Voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD Pin PD Topr Tstg VDD=2.7V On PCB board, Tjmax=150C CONDITIONS RATINGS 5.0 +15 150 -40~+85 -55~+150 UNITS V dBm mW C C ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: VDD=2.7V, fRF=1575MHz, Ta=+25C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating Frequency Operating voltage Operating current1 Small signal gain Noise figure Input power at 1dB gain compression point Input 3rd order intercept point RF IN VSWR RF OUT VSWR SYMBOL freq VDD IDD Gain NF P-1dB(IN) IIP3 VSWRi VSWRo f1=fRF, f2=fRF+100kHz, Pin=-34dBm Exclude PCB & connector losses (IN: 0.05dB) RF OFF CONDITIONS MIN 1.57 2.5 17.5 -19.0 -8.0 TYP 1.575 2.7 3.0 19.5 0.7 -16.5 -2.0 2.0 1.5 MAX 1.58 3.6 4.0 22.0 1.0 2.5 2.0 UNITS GHz V mA dB dB dBm dBm -2- NJG1117HA8 TERMINAL INFORMATION No. SYMBOL DESCRIPTION RF Output and voltage supply pin. An external output matching circuit and a bypass capacitor are required. L3 is a RF choke inductor. These elements are used as output matching circuit. Ground terminal. (0V) 1 RFOUT 2 GND 3 GND Ground terminal. (0V) 4 RFIN RF input pin. A DC blocking capacitor is not required. An external input matching circuit is required. 5 GND Ground terminal. (0V) 6 GND Ground terminal. (0V) CAUTION 1) Ground terminal (2, 3, 5, 6) should be connected with the ground plane as low inductance as possible. -3- NJG1117HA8 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.) Pout vs. Pin 10 5 0 (VDD=2.7V, fRF=1575MHz) 24 22 Gain, IDD vs. Pin (VDD=2.7V, fRF=1575MHz) 8 7 Gain 20 6 Pout (dBm) Gain (dB) -5 -10 -15 -20 -25 -40 P-1dB(IN)=-16.6dBm 16 14 12 10 8 -40 P-1dB(IN)=-16.2dBm IDD 4 3 2 1 0 -30 -20 -10 0 10 -30 -20 -10 0 10 Pin (dBm) Pin (dBm) NF, Gain vs. frequency 3 (VDD=2.7V) 22 20 Pout, IM3 vs. Pin (VDD=2.7V, fRF=1575+1575.1MHz) 2.5 21 0 Pout Noise Figure (dB) 1.5 19 Gain (dB) 2 20 Pout, IM3 (dBm) Gain -20 -40 NF 1 18 -60 IM3 0.5 (NF: Exclude PCB, Connector Losses) 17 -80 IIP3=-1.9dBm 0 1.5 1.55 1.6 16 1.65 -100 -40 -30 -20 -10 0 10 frequency (GHz) Pin (dBm) k factor vs. frequency 20 (VDD=2.7V) 15 k factor 10 5 0 0 5 10 15 20 frequency (GHz) -4- IDD (mA) Pout 18 5 NJG1117HA8 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.) Gain, NF vs. VDD 24 22 (fRF=1575MHz) 3.5 3 -10 -12 P-1dB(IN) vs. VDD (fRF=1575MHz) Gain 20 2.5 2 1.5 P-1dB(IN) (dBm) -14 Gain (dB) 18 16 14 12 10 2.4 NF (dB) P-1dB(IN) -16 -18 -20 -22 -24 2.4 NF 1 0.5 0 3.8 2.6 2.8 3 3.2 3.4 3.6 2.6 2.8 3 3.2 3.4 3.6 3.8 VDD (V) VDD (V) OIP3, IIP3 vs. VDD 24 22 20 (fRF=1575+1575.1MHz, Pin=-34dBm) 10 8 5 VSWR vs. VDD (fRF=1575MHz) 18 16 14 12 10 8 2.4 4 2 0 VSWRi, VSWRo OIP3 6 4 VSWRi VSWRo OIP3 (dBm) IIP3 (dBm) 3 2 IIP3 -2 1 -4 -6 3.8 0 2.4 2.6 2.8 3 3.2 3.4 3.6 2.6 2.8 3 3.2 3.4 3.6 3.8 VDD (V) VDD (V) IDD vs. VDD 6 (RF OFF) 5 4 IDD (mA) IDD 3 2 1 0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 VDD (V) -5- NJG1117HA8 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.) Gain, NF vs. Temperature 24 22 20 (fRF=1575MHz) 3.5 3 -10 -12 P-1dB(IN) vs. Temperature (fRF=1575MHz) P-1dB(IN) (dBm) Gain 2.5 -14 -16 -18 -20 -22 -24 -50 Gain (dB) 18 16 14 2 1.5 1 NF 12 10 -50 0.5 0 100 NF (dB) P-1dB(IN) 0 50 0 50 100 Temperature (oC) Temperature (oC) OIP3, IIP3 vs. Temperature 25 (fRF=1575+1575.1MHz, Pin=-34dBm) 15 5 VSWR vs. Temperature (f=1575MHz) 20 10 4 VSWRi VSWRo 15 5 VSWRi, VSWRo OIP3 OIP3 (dBm) IIP3 (dBm) 3 10 0 2 5 IIP3 -5 1 0 -50 0 50 -10 100 0 -50 0 50 100 Temperature (oC) Temperature (oC) IDD vs. Temperature 5 (RF OFF) 4 IDD (mA) 3 IDD 2 1 0 -50 0 50 100 Temperature (oC) -6- NJG1117HA8 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.) -7- NJG1117HA8 APPLICATION CIRCUIT HA8 Type (Top View) GND 3 GND L2 8.2nH RFIN RF IN L1 4 2 33nH Bias Circuit L4 GND RFOUT C1 22nH 1.5pF 5 1 L3 GND RF OUT 6.8nH VDD=2.7V C2 6 1000pF 1Pin INDEX TEST PCB LAYOUT (Top View) Parts list Parts ID L1 ~ L3 L4 L1 C1 RF IN L2 C2 L4 L3 PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.34mm (Z0=50 ohm) PCB SIZE=14.0mm x 14.0mm RF OUT Comment MURATA (LQP03T Series) TDK (MLK0603 Series) MURATA (GRM03 Series) C1 ~ C2 VDD -8- NJG1117HA8 MEASUREMENT BLOCK DIAGRAM VDD=2.7V VDD=2.9V RF Input DUT RF Output Port1 Port2 Network Analyzer S parameter Measurement Block Diagram VDD=2.7V VDD=2.9V RF Input RF Output DUT N.S. Output Noise Source Input Analyzer NF Meter Noise Figure Measurement Block Diagram VDD=2.7V freq1=865.0MHz Signal Generator freq1 VDD=2.9V Isolator RF Input DUT RFOutput Spectrum Analyzer Center=865.05Hz Span=400kHz RBW=3kHz VBW=100Hz Signal Generator freq2=865.1MHz freq2 Isolator Power Comb. 6dB Variable Attenuator IF and IM3 Measurement Block Diagram for IIP3 -9- NJG1117HA8 PACKAGE OUTLINE (USB6-A8) 0.380.06 +0.012 0.038-0.009 S 0.03 S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.2 (MIN0.15) 6 5 1.20.05 0.20.04 C0.1 R0.05 1 0.10.05 Photo resist coating 0.8 0.4 0.6 0.20.04 2 3 0.4 1.00.05 0.20.07 4 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 10 - |
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